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DS1822
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature Range
Storage Temperature Range
Solder Dip Temperature
Reflow Oven Temperature
-0.5V to +6.0V
-55 ° C to +125 ° C
-55 ° C to +125 ° C
See IPC/JEDEC J-STD-020A Specification
+220°C
*These are stress ratings only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
DC ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL CONDITION
Supply Voltage V DD Local Power
Pullup Supply V PU Parasite Power
Voltage Local Power
Thermometer Error t ERR -10°C to
+85°C
-55°C to
+125°C
Input Logic Low V IL
Input Logic High V IH Local Power
Parasite Power
(-55°C to +125°C; V DD = 3.0V to 5.5V)
MIN TYP MAX UNITS NOTES
+3.0 +5.5 V 1
+3.0 +5.5 V 1, 2
+3.0 V DD
±2 °C 3
±3
-0.3 +0.8 V 1, 4, 5
+2.2 The lower of V 1, 6
5.5
+3.0 or
V DD + 0.3
V I/O
Sink Current I L = 0.4V
Standby Current I DDS
V DD
Active Current I DD = 5V
DQ Input Current I DQ
Drift
NOTES:
1. All voltages are referenced to ground.
4.0
750
1
5
±0.2
1000
1.5
mA
nA
mA
μA
°C
1
7, 8
9
10
11
2.
3.
4.
5.
6.
7.
8.
9.
The Pullup Supply Voltage specification assumes that the pullup device is ideal, and therefore the
high level of the pullup is equal to V PU . In order to meet the V IH spec of the DS1822, the actual
supply rail for the strong pullup transistor must include margin for the voltage drop across the
transistor when it is turned on; thus: V PU_ACTUAL = V PU_IDEAL + V TRANSISTOR .
See typical performance curve in Figure 17.
Logic low voltages are specified at a sink current of 4mA.
To guarantee a presence pulse under low voltage parasite power conditions, V ILMAX may have to be
reduced to as low as 0.5V.
Logic high voltages are specified at a source current of 1mA.
Standby current specified up to +70 ° C. Standby current typically is 3 μ A at +125 ° C.
To minimize I DDS , DQ should be within the following ranges: GND ≤ DQ ≤ GND + 0.3V or V DD -
0.3V ≤ DQ ≤ V DD .
Active current refers to supply current during active temperature conversions or EEPROM writes.
10. DQ line is high (high-Z state).
11. Drift data is based on a 1000 hour stress test at +125°C with V DD = 5.5V.
19 of 21
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